Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures

Crupi, F.F.CrupiGiusi, G.G.GiusiIannacone, G.G.IannaconeMagnone, P.P.MagnonePace, C.C.PaceSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-1720090021-8979https://imec-publications.be/handle/20.500.12860/15144Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structuresJournal article