Vici, AndreaAndreaViciDegraeve, RobinRobinDegraeveFranco, JacopoJacopoFrancoKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselDe Wolf, IngridIngridDe Wolf2023-12-152023-12-032023-12-1520230018-9383WOS:001101429200001https://imec-publications.be/handle/20.500.12860/43218Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress ConditionJournal article10.1109/TED.2023.3326430WOS:001101429200001ULTRATHIN SILICON DIOXIDESUBSTRATE-HOT-ELECTRONOXIDE BREAKDOWNTRAP GENERATIONGATERELIABILITYDEGRADATIONPREDICTIONDEPENDENCEPHYSICS