Batista-Pessoa, WalterWalterBatista-PessoaFranck, MaxMaxFranckNuns, NicolasNicolasNunsDabrowski, JarekJarekDabrowskiAchehboune, MohamedMohamedAchehbouneColomer, Jean-FrancoisJean-FrancoisColomerHenrard, LucLucHenrardLukosius, MindaugasMindaugasLukosiusWallart, XavierXavierWallartVignaud, DominiqueDominiqueVignaud2025-05-022025-05-0220250169-4332WOS:001468252400001https://imec-publications.be/handle/20.500.12860/45577The growth of two-dimensional boron nitride (2D-BN) thin films on Ge (001) has been studied, with the ultimate goal of integrating this material into Si technology. Molecular beam epitaxy was used in a dedicated ultra-high vacuum chamber. To avoid the formation of thermal pits on heating the Ge film above ∼750 °C, a two-step procedure was optimized. A thin 2D-BN buffer layer is first grown at ∼730 °C using two independent cells for B and N, aimed at stabilizing the Ge surface and to prevent thermal pits formation upon further heating. The second-step at 800 °C makes use of another precursor, gaseous borazine, in the same chamber. The growth proceeds in a step-flow mode, and results in homogeneous nano-crystalline large-surface 2D-BN films with a ∼1 nm roughness.Journal article10.1016/j.apsusc.2025.163165WOS:001468252400001CVD GROWTHMONOLAYERGRAPHENE