Optimized two-step growth of large surface two-dimensional boron nitride on Ge (001) films by molecular beam epitaxy

Batista-Pessoa, WalterWalterBatista-PessoaFranck, MaxMaxFranckNuns, NicolasNicolasNunsDabrowski, JarekJarekDabrowskiAchehboune, MohamedMohamedAchehbouneColomer, Jean-FrancoisJean-FrancoisColomerHenrard, LucLucHenrardLukosius, MindaugasMindaugasLukosiusWallart, XavierXavierWallartVignaud, DominiqueDominiqueVignaud2025-05-022025-05-022025-AUG 10169-4332WOS:001468252400001https://imec-publications.be/handle/20.500.12860/45577Optimized two-step growth of large surface two-dimensional boron nitride on Ge (001) films by molecular beam epitaxyJournal article10.1016/j.apsusc.2025.163165WOS:001468252400001CVD GROWTHMONOLAYERGRAPHENE