Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence

Bogdanowicz, JanuszJanuszBogdanowiczOniki, YusukeYusukeOnikiKenis, KarineKarineKenisPuttarame Gowda, PallaviPallaviPuttarame GowdaMertens, HansHansMertensShamieh, BaselBaselShamiehLeon, YonatanYonatanLeonWormington, MatthewMatthewWormingtonVan der Meer, JulietteJulietteVan der MeerCharley, Anne-LaureAnne-LaureCharley2024-02-272023-12-152024-02-2720231932-5150WOS:001099590700015https://imec-publications.be/handle/20.500.12860/43265Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescenceJournal article10.1117/1.JMM.22.3.034001WOS:001099590700015