Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode

Chen, YangyinYangyinChenGoux, LudovicLudovicGouxPantisano, LuigiLuigiPantisanoSwerts, JohanJohanSwertsAdelmann, ChristophChristophAdelmannMertens, SofieSofieMertensAfanasiev, ValeriValeriAfanasievWang, Xin PengXin PengWangGovoreanu, BogdanBogdanGovoreanuDegraeve, RobinRobinDegraeveKubicek, StefanStefanKubicekParaschiv, VasileVasileParaschivVerbrugge, BeatrijsBeatrijsVerbruggeJossart, NicoNicoJossartAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczakKittl, JorgeJorgeKittlGroeseneken, GuidoGuidoGroesenekenWouters, DirkDirkWouters2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18666Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrodeProceedings paper