3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters

Vandooren, AnneAnneVandoorenWu, ZhichengZhichengWuParihar, NarendraNarendraPariharFranco, JacopoJacopoFrancoParvais, BertrandBertrandParvaisMatagne, PhilippePhilippeMatagneDebruyn, HaroenHaroenDebruynMannaert, GeertGeertMannaertDevriendt, KatiaKatiaDevriendtTeugels, LieveLieveTeugelsVecchio, EmmaEmmaVecchioRadisic, DunjaDunjaRadisicRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyChan, BTBTChanWaldron, NiamhNiamhWaldronMitard, JeromeJeromeMitardBesnard, G.G.BesnardAlvarez, A.A.AlvarezGaudin, G.G.GaudinSchwarzenbach, W.W.SchwarzenbachRadu, I.I.RaduNguyen, B. Y.B. Y.NguyenHuet, K.K.HuetTabata, T.T.TabataMazzamuto, F.F.MazzamutoDemuynck, StevenStevenDemuynckBoemmels, JuergenJuergenBoemmelsCollaert, NadineNadineCollaertHoriguchi, NaotoNaotoHoriguchi2021-12-082021-11-022021-12-0820200743-1562WOS:000668063000017https://imec-publications.be/handle/20.500.12860/377533D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boostersProceedings paper978-1-7281-6460-1WOS:000668063000017