Gate-stack engineered NBTI improvements in high-voltage logic-for-memory high-k/metal gate devices

O'Sullivan, BarryBarryO'SullivanRitzenthaler, RomainRomainRitzenthalerRzepa, GGRzepaWu, ZhichengZhichengWuDentoni Litta, EugenioEugenioDentoni LittaRichard, OlivierOlivierRichardConard, ThierryThierryConardMachkaoutsan, VladimirVladimirMachkaoutsanFazan, PierrePierreFazanKim, CheolgyuCheolgyuKimFranco, JacopoJacopoFrancoKaczer, BenBenKaczerGrasser, TTGrasserSpessot, AlessioAlessioSpessotLinten, DimitriDimitriLintenHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33713Gate-stack engineered NBTI improvements in high-voltage logic-for-memory high-k/metal gate devicesProceedings paperhttps://ieeexplore.ieee.org/document/8720598