Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key

Koladi Mootheri, VivekVivekKoladi MootheriLeonhardt, AlessandraAlessandraLeonhardtVerreck, DevinDevinVerreckAsselberghs, IngeIngeAsselberghsHuyghebaert, CedricCedricHuyghebaertDe Gendt, StefanStefanDe GendtRadu, IulianaIulianaRaduLin, DennisDennisLinHeyns, MarcMarcHeyns2022-02-182022-02-1820210957-4484WOS:000605466100001https://imec-publications.be/handle/20.500.12860/38896Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the keyJournal article10.1088/1361-6528/abd27aWOS:000605466100001HEXAGONAL BORON-NITRIDECONTACTBARRIER