Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Houssa, MichelMichelHoussaAfanas'ev, V. V.V. V.Afanas'evStesmans, AndreAndreStesmansHeyns, MarcMarcHeyns2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4433Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidationJournal article