Characterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technology

Habas, PredragPredragHabasBellens, RudiRudiBellensGroeseneken, GuidoGuidoGroesenekenVan den bosch, G.G.Van den boschDeferm, LudoLudoDeferm2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/668Characterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technologyProceedings paper