Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Rony, M. W.M. W.RonyZhang, En XiaEn XiaZhangToguchi, ShintaroShintaroToguchiLuo, XuyiXuyiLuoReaz, MahmudMahmudReazLi, KanKanLiLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardReed, Robert A.Robert A.ReedFleetwood, Daniel M.Daniel M.FleetwoodSchrimpf, Ronald D.Ronald D.Schrimpf2022-04-262022-03-302022-04-012022-04-2620220018-9499WOS:000770010500029https://imec-publications.be/handle/20.500.12860/39553Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETsJournal article10.1109/TNS.2022.3144204WOS:000770010500029INDUCED DRAIN LEAKAGE1/F NOISETEMPERATURE INSTABILITYBORDER TRAPSGATEINTERFACEDEGRADATIONDEPENDENCERADIATIONSOI