Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD

Dhayalan, Sathish KumarSathish KumarDhayalanNuytten, ThomasThomasNuyttenLoo, RogerRogerLooRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyShimura, YosukeYosukeShimuraVandervorst, WilfriedWilfriedVandervorst2021-10-242021-10-242017-112162-8769https://imec-publications.be/handle/20.500.12860/28241Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVDJournal articlehttp://jss.ecsdl.org/content/6/12/P755.full.pdf+html?sid=b512b0ef-afd4-402f-8187-fe20a970c676