Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates

Kobayashi, DaisukeDaisukeKobayashiSimoen, EddyEddySimoenPut, SofieSofiePutGriffoni, AlessioAlessioGriffoniPoizat, MarcMarcPoizatHirose, KazuyukiKazuyukiHiroseClaeys, CorCorClaeys2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17390Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substratesProceedings paper