Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing

Nourbakhsh, AmirhasanAmirhasanNourbakhshCantoro, MircoMircoCantoroKlekachev, AlexanderAlexanderKlekachevClemente, FrancescaFrancescaClementeSoree, BartBartSoreevan der Veen, MarleenMarleenvan der VeenVosch, TomTomVoschStesmans, AndreAndreStesmansSels, BertBertSelsDe Gendt, StefanStefanDe Gendt2021-10-182021-10-1820101932-7447https://imec-publications.be/handle/20.500.12860/17712Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealingJournal article