Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers

Alam, M.A.M.A.AlamGreen, MartinMartinGreen2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7128Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layersJournal article