TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersZhang, JianJianZhangWang, LinlinLinlinWangEveraert, Jean-LucJean-LucEveraertHoriguchi, NaotoNaotoHoriguchiJiang, Yu-LongYu-LongJiangMocuta, DanDanMocutaCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe Meyer2021-10-242021-10-2420170018-9383https://imec-publications.be/handle/20.500.12860/29996TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGeJournal articlehttp://ieeexplore.ieee.org/document/7807312/