Extraction of statistical gate oxide parameters from large MOSFET arrrays

Stampfer, BernhardBernhardStampferSimicic, MarkoMarkoSimicicWeckx, PieterPieterWeckxAbbasi, ArashArashAbbasiKaczer, BenBenKaczerGrasser, TiborTiborGrasserWaltl, MichaelMichaelWaltl2021-10-292021-10-2920201530-4388https://imec-publications.be/handle/20.500.12860/36011Extraction of statistical gate oxide parameters from large MOSFET arrraysJournal article10.1109/TDMR.2020.2985109