Junctionless versus inversion mode gate-all-around nanowire transistors from a low-frequency noise perspective

Simoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoMatagne, PhilippePhilippeMatagneCollaert, NadineNadineCollaertClaeys, CorCorClaeys2021-10-262021-10-2620180018-9383https://imec-publications.be/handle/20.500.12860/31790Junctionless versus inversion mode gate-all-around nanowire transistors from a low-frequency noise perspectiveJournal articlehttp://ieeexplore.ieee.org/document/8291052/