Hantschel, ThomasThomasHantschelSchulz, VolkerVolkerSchulzSchulze, AndreasAndreasSchulzeAngeletti, EstebanEstebanAngelettiGuder, FiratFiratGuderSchmidt, VolkerVolkerSchmidtSenz, StephanStephanSenzEyben, PierrePierreEybenVandervorst, WilfriedWilfriedVandervorst2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15433Characterizing the two-dimensional doping concentration inside silicon-nanowires using scanning spreading resistance microscopyProceedings paper