AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility

Cheng, KaiKaiChengLiang, HuHuLiangVan Hove, MarleenMarleenVan HoveGeens, KarenKarenGeensDe Jaeger, BriceBriceDe JaegerSrivastava, PuneetPuneetSrivastavaKang, XuanwuXuanwuKangFavia, PaolaPaolaFaviaBender, HugoHugoBenderDecoutere, StefaanStefaanDecoutereDekoster, JohanJohanDekosterdel Agua Borniquel, Jose IgnacioJose Ignaciodel Agua BorniquelJun, Sung WonSung WonJunChung, HuaHuaChung2021-10-202021-10-2020121882-0778https://imec-publications.be/handle/20.500.12860/20450AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobilityJournal article