Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas

Baklanov, MikhaïlMikhaïlBaklanovVanhaelemeersch, SergeSergeVanhaelemeerschStorm, WolfgangWolfgangStormKim, Young-ChangYoung-ChangKimVandervorst, WilfriedWilfriedVandervorstMaex, KarenKarenMaex2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1719Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmasJournal article