On the temperature and field dependence of trap-assisted tunneling current in Ge p+n junctions

Simoen, EddyEddySimoenDe Stefano, FrancescaFrancescaDe StefanoEneman, GeertGeertEnemanDe Jaeger, BriceBriceDe JaegerClaeys, CorCorClaeysCrupi, FeliceFeliceCrupi2021-10-182021-10-1820090741-3106https://imec-publications.be/handle/20.500.12860/16229On the temperature and field dependence of trap-assisted tunneling current in Ge p+n junctionsJournal article