Influence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell properties

Trusheim, DanielDanielTrusheimSchulz-Ruhtenberg, MalteMalteSchulz-RuhtenbergSmeets, M.M.SmeetsDas, JoJoDasWieduwilt, J.J.Wieduwilt2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19918Influence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell propertiesProceedings paper