Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

Wu, Tian-LiTian-LiWuFranco, JacopoJacopoFrancoMarcon, DenisDenisMarconDe Jaeger, BriceBriceDe JaegerBakeroot, BenoitBenoitBakerootStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-2320160018-9383https://imec-publications.be/handle/20.500.12860/27606Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7440814