Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

Sun, YitingYitingSunLevrau, ElisabethElisabethLevrauBlauw, MichielMichielBlauwMeersschaut, JohanJohanMeersschautVerdonck, PatrickPatrickVerdonckStruyf, HerbertHerbertStruyfDetavernier, ChrostopheChrostopheDetavernierBaklanov, MikhaïlMikhaïlBaklanovDe Feyter, StevenStevenDe FeyterArmini, SilviaSilviaArmini2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23138Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiNProceedings paper