Multiple-gate tunneling field effect transistors with sub-60mV/dec subthreshold slope

Leonelli, DanieleDanieleLeonelliVandooren, AnneAnneVandoorenRooyackers, RitaRitaRooyackersVerhulst, AnneAnneVerhulstDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15689Multiple-gate tunneling field effect transistors with sub-60mV/dec subthreshold slopeProceedings paper