High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

Yoshida, ShinichiShinichiYoshidaLin, DennisDennisLinVais, AbhitoshAbhitoshVaisAlian, AliRezaAliRezaAlianFranco, JacopoJacopoFrancoEl Kazzi, SalimSalimEl KazziMols, YvesYvesMolsMiyanami, YukiYukiMiyanamiNakazawa, M.M.NakazawaCollaert, NadineNadineCollaertWatanabe, H.H.WatanabeThean, AaronAaronThean2021-10-242021-10-2420172168-6734https://imec-publications.be/handle/20.500.12860/29993High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodesJournal articlehttp://ieeexplore.ieee.org/document/8013022/