245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining

Yun, ByeonghunByeonghunYunPark, Dae-WoongDae-WoongParkChoi, Kyung-SikKyung-SikChoiSong, Ho-JinHo-JinSongLee, Sang-GugSang-GugLee2022-09-272022-04-042022-09-272021naWOS:000768220800002https://imec-publications.be/handle/20.500.12860/39575245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power CombiningProceedings paper10.1109/A-SSCC53895.2021.9634180978-1-6654-4350-0WOS:000768220800002WIDE-BANDP-SAT