High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors

Hikavyy, AndriyAndriyHikavyyVanherle, WendyWendyVanherleWitters, LiesbethLiesbethWittersVincent, BenjaminBenjaminVincentDekoster, JohanJohanDekosterLoo, RogerRogerLoo2021-10-212021-10-2120132162-8769https://imec-publications.be/handle/20.500.12860/22491High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistorsJournal article10.1149/2.009306jss