III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

Vais, AbhitoshAbhitoshVaisYadav, SachinSachinYadavMols, YvesYvesMolsVermeersch, BjornBjornVermeerschVondkar Kodandarama, KomalKomalVondkar KodandaramaBaryshnikova, MarinaMarinaBaryshnikovaMannaert, GeertGeertMannaertAlcotte, ReynaldReynaldAlcotteBoccardi, GuillaumeGuillaumeBoccardiWambacq, PietPietWambacqParvais, BertrandBertrandParvaisLanger, RobertRobertLangerKunert, BernardetteBernardetteKunertCollaert, NadineNadineCollaert2023-06-012023-02-092023-06-0120221930-8876WOS:000904209900012https://imec-publications.be/handle/20.500.12860/41069III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performanceProceedings paper10.1109/ESSDERC55479.2022.9947124978-1-6654-8497-8WOS:000904209900012