Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current

Pham, Anh-TuanAnh-TuanPhamZhao, Qing-TaiQing-TaiZhaoJungemann, ChristophChristophJungemannMeinerzhagen, BerndBerndMeinerzhagenSoree, BartBartSoreePourtois, GeoffreyGeoffreyPourtois2021-10-192021-10-1920110038-1101https://imec-publications.be/handle/20.500.12860/19570Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentJournal article