First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths

Lu, AugustinAugustinLuPourtois, GeoffreyGeoffreyPourtoisStokbro, KurtKurtStokbroThean, AaronAaronTheanRadu, IulianaIulianaRaduHoussa, MichelMichelHoussa2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25585First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengthsMeeting abstract