Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

You, ShuzhenShuzhenYouLi, XiangdongXiangdongLiDecoutere, StefaanStefaanDecoutereGroeseneken, GuidoGuidoGroesenekenChen, ZhanfeiZhanfeiChenLiu, JunJunLiuYamashita, YukiYukiYamashitaKobayashi, KazutoshiKazutoshiKobayashi2021-10-282021-10-282019https://imec-publications.be/handle/20.500.12860/34495Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistorsProceedings paper