Kittl, JorgeJorgeKittlOpsomer, KarlKarlOpsomerPopovici, Mihaela IoanaMihaela IoanaPopoviciMenou, NicolasNicolasMenouKaczer, BenBenKaczerWang, Xin PengXin PengWangAdelmann, ChristophChristophAdelmannPawlak, MalgorzataMalgorzataPawlakTomida, KazuyukiKazuyukiTomidaRothschild, AudeAudeRothschildGovoreanu, BogdanBogdanGovoreanuDegraeve, RobinRobinDegraeveSchaekers, MarcMarcSchaekersZahid, MohammedMohammedZahidDelabie, AnneliesAnneliesDelabieMeersschaut, JohanJohanMeersschautPolspoel, W.W.PolspoelClima, SergiuSergiuClimaPourtois, GeoffreyGeoffreyPourtoisKnaepen, W.W.KnaepenDetavernier, C.C.DetavernierAfanasiev, ValeriValeriAfanasievBlomberg, T.T.BlombergPierreux, DieterDieterPierreuxSwerts, JohanJohanSwertsFischer, P.P.FischerMaes, JanJanMaesManger, D.D.MangerVandervorst, WilfriedWilfriedVandervorstConard, ThierryThierryConardFranquet, AlexisAlexisFranquetFavia, PaolaPaolaFaviaBender, HugoHugoBenderBrijs, BertBertBrijsVan Elshocht, SvenSvenVan ElshochtJurczak, GosiaGosiaJurczakVan Houdt, JanJanVan HoudtWouters, DirkDirkWouters2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15603High-k dielectrics and metal gates for future generation memory devicesProceedings paper