In0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applications

Zhou, DaisyDaisyZhouAlian, AliRezaAliRezaAlianMols, YvesYvesMolsRooyackers, RitaRitaRooyackersLin, DennisDennisLinIvanov, TsvetanTsvetanIvanovPourghaderi, Mohammad AliMohammad AliPourghaderiCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24894In0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applicationsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6894419