High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors

Hikavyy, AndriyAndriyHikavyyVanherle, WendyWendyVanherleWitters, LiesbethLiesbethWittersVincent, BenjaminBenjaminVincentDekoster, JohanJohanDekosterLoo, RogerRogerLoo2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20815High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistorsProceedings paper