Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications

Ackaert, JanJanAckaertLowe, AntonyAntonyLoweBoonen, SylvieSylvieBoonenYao, ThierryThierryYaoRayhem, JosephJosephRayhemDesoete, BartBartDesoetePrasad, JagdishJagdishPrasadThomason, MikeMikeThomasonVan Houdt, JanJanVan HoudtDegraeve, RobinRobinDegraeveHaspeslagh, LucLucHaspeslaghHendrickx, PaulPaulHendrickx2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8462Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applicationsJournal article