Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Zhichun, WangWangZhichunAckaert, J.J.AckaertSalm, C.C.Salmde Backer, E.E.de BackerVan den Bosch, GeertGeertVan den BoschZawalski, WadeWadeZawalski2021-10-152021-10-152002https://imec-publications.be/handle/20.500.12860/7109Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxideProceedings paper