Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

Xu, KaidongKaidongXuSouriau, LaurentLaurentSouriauHellin, DavidDavidHellinVersluijs, JankoJankoVersluijsWong, PatrickPatrickWongVangoidsenhoven, DizianaDizianaVangoidsenhovenVandenbroeck, NadiaNadiaVandenbroeckDekkers, HaroldHaroldDekkersShi, XiaopingXiaopingShiAlbert, JohanJohanAlbertTan, Chi LimChi LimTanVertommen, JohanJohanVertommenCoenegrachts, BartBartCoenegrachtsOrain, IsabelleIsabelleOrainKimura, YoshieYoshieKimuraWiaux, VincentVincentWiauxBoullart, WernerWernerBoullart2021-10-212021-10-212013-091537-1646https://imec-publications.be/handle/20.500.12860/23410Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterningJournal articlehttp://nanolithography.spiedigitallibrary.org/article.aspx?articleid=1735267