Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Toledano Luque, MariaMariaToledano LuqueKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselCho, Moon JuMoon JuChoGrasser, TiborTiborGrasserGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/18092Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stressProceedings paper