Selective epitaxial p-SiGe source-drain contacts: low contact resistivity (1.5x10-9 ohm.cm2) by optimizing strain and doping concentration

Porret, ClémentClémentPorretHuang, Yan-HuaYan-HuaHuangRengo, GianlucaGianlucaRengoYu, HaoHaoYuSchaekers, MarcMarcSchaekersEveraert, Jean-LucJean-LucEveraertHeyns, MarcMarcHeynsVohra, AnuragAnuragVohraHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelLanger, RobertRobertLangerLoo, RogerRogerLoo2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33819Selective epitaxial p-SiGe source-drain contacts: low contact resistivity (1.5x10-9 ohm.cm2) by optimizing strain and doping concentrationProceedings paperhttp://www.ssdm.jp/docs/SSDM2019_TechnicalProgram-All_Sep3-5.pdf?rev=20190827