Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Chauhan, PrernaPrernaChauhanHasenöhrl, StanislavStanislavHasenöhrlMinj, AlbertAlbertMinjChauvat, Marie PierreMarie PierreChauvatRuterana, PierrePierreRuteranaKuzmík, JanJanKuzmík2021-10-282021-10-2820200169-4332https://imec-publications.be/handle/20.500.12860/34882Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayerJournal articlehttps://doi.org/10.1016/j.apsusc.2019.144086