Valence-band electron-tunneling measurement of the gate work function: application to the high-k / polycrystalline-silicon interface

Pantisano, LuigiLuigiPantisanoAfanas'ev, ValeriValeriAfanas'evPourtois, GeoffreyGeoffreyPourtoisChen, Pei JunPei JunChen2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10976Valence-band electron-tunneling measurement of the gate work function: application to the high-k / polycrystalline-silicon interfaceJournal article