Hole-trapping-related transients in shallow n+-p junctions fabricated in a high-energy boron-implanted p well

Poyai, AmpornAmpornPoyaiSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5585Hole-trapping-related transients in shallow n+-p junctions fabricated in a high-energy boron-implanted p wellJournal article