Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation

Kao, FrankFrankKaoVerhulst, AnneAnneVerhulstVan de Put, MaartenMaartenVan de PutPourghaderi, Mohammad AliMohammad AliPourghaderiVandenberghe, WilliamWilliamVandenbergheSoree, BartBartSoreeMagnus, WimWimMagnusDe Meyer, KristinKristinDe Meyer2021-10-222021-10-2220140021-8979https://imec-publications.be/handle/20.500.12860/24032Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulationJournal articlehttp://scitation.aip.org/docserver/fulltext/aip/journal/jap/115/4/1.4862806.pdf?expires=1391088229&id=id&accname=366702&checksum