Improved extraction of carrier concentration and depletion width from capacitance-voltage characteristics of silicon N(+)- P-well junction diodes

Poyai, AmpornAmpornPoyaiClaeys, CorCorClaeysSimoen, EddyEddySimoen2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6737Improved extraction of carrier concentration and depletion width from capacitance-voltage characteristics of silicon N(+)- P-well junction diodesJournal article