Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

Favero, D.D.FaveroDe Santi, C.C.De SantiMukherjee, K.K.MukherjeeGeens, KarenKarenGeensBorga, MatteoMatteoBorgaBakeroot, BenoitBenoitBakerootYou, ShuzhenShuzhenYouDecoutere, StefaanStefaanDecoutereMeneghesso, G.G.MeneghessoZanoni, E.E.ZanoniMeneghini, M.M.Meneghini2023-06-012023-02-272023-06-0120221541-7026WOS:000922926400165https://imec-publications.be/handle/20.500.12860/41195Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETsProceedings paper10.1109/IRPS48227.2022.9764600978-1-6654-7950-9WOS:000922926400165CAPACITORS