Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Yamamoto, YujiYujiYamamotoWen, Wei-ChenWei-ChenWenSchubert, Markus AndreasMarkus AndreasSchubertCorley-Wiciak, Agnieszka AnnaAgnieszka AnnaCorley-WiciakSugawa, ShoShoSugawaIto, YutaYutaItoYokogawa, RyoRyoYokogawaHan, HanHanHanLoo, RogerRogerLooOgura, AtsushiAtsushiOguraTillack, BerndBerndTillack2025-07-082024-01-252025-07-0820240021-4922WOS:001143752700001https://imec-publications.be/handle/20.500.12860/43455Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growthJournal article10.35848/1347-4065/ad189dWOS:001143752700001HETEROEPITAXIAL GROWTHSILICONGE