Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditions

Sibaja-Hernandez, ArturoArturoSibaja-HernandezXu, MingweiMingweiXuDecoutere, StefaanStefaanDecoutereMaes, HermanHermanMaes2021-10-152021-10-152004-05https://imec-publications.be/handle/20.500.12860/9596Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditionsProceedings paper