Profiling different kind of generated defects at elevated temperatures in both SiO2 and high-k dielectrics

Sahhaf, SaharSaharSahhafDegraeve, RobinRobinDegraeveZahid, MohammedMohammedZahidGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17930Profiling different kind of generated defects at elevated temperatures in both SiO2 and high-k dielectricsProceedings paper